Articles | Volume 8
https://doi.org/10.5194/ars-8-275-2010
https://doi.org/10.5194/ars-8-275-2010
17 Nov 2010
 | 17 Nov 2010

Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

M. Weis and D. Schmitt-Landsiedel

Abstract. The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.