Advances in Radio Science www.adv-radio-sci.net 1684-9965 1684-9973 7 Kleinheubacher Berichte 2008 2009 10.5194/ars-7-231-2009 http://www.adv-radio-sci.net/7/231/2009/ http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.html http://www.adv-radio-sci.net/7/231/2009/ars-7-231-2009.pdf 231 236 2009-05-19 Circuit design with Independent Double Gate Transistors M. Weis marcus.weis@tum.de R. Emling D. Schmitt-Landsiedel Technische Universität München, Lehrstuhl für Technische Elektronik, Germany Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration. Shockley, W.: A Unipolar "Field-Effect" Transistor, Proceedings of the IRE, 40(11), 1365–1376, 1952. Chiang, M.-H., Kim, K., Chuang, C.-T., and Tretz, C.: High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate Devices, IEEE T. Electron. Dev., 53(9), 2370–2377, 2006. Mukhopadhyay, S., Mahmoodi, H., and Roy, K.: Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50 nm Double-Gate MOSFET, Quality of Electronic Design, 2005, ISQED, 2005. Maly W. and Pfitzner A.: Complementary Vertical Slit Field Effect Transistors, Carnegie Mellon University, CSSI Techreport No. CSSI 08-02, 01/2008, 2008. Weis, M., Pfitzner, A., Kasprowicz, D., Lin, Y.-W., Fischer, Th., Emling, R., Marek-Sadowska, M., Schmitt-Landsiedel, D., and Maly, W.: Low Power SRAM Cell Using Vertical Slit Field Effect Transistor (VeSFET), European Solid-State Circuits Conference, ESSCIRC Fringe, 2008. Lin, Y.-W., Marek-Sadowska, M., Maly, W., Pfitzner, A., and Kasprowicz D.: Is There Always Performance Overhead for Regular Fabric?, in: Proc. IEEE International Conference on Computer Design ICCD 2008, 557–562, 2008. Maly, W.: Integrated Circuit Fabrication and Associated Methods, Devices and Systems, U.S. Non-Provisional Patent Application Serial Number CMU Docket 06-091; DMC Docket 06-001PCTCMU, 11/2007, 2007. Nanoscale Integration and Arizona State University Modeling Group, Predictive Technology Model (PTM), http://www.eas.asu.edu/~ptm/, 2008. Weste, N. H. E. and Harris, D.: CMOS VLSI DESIGN, A Circuits and Systems Perspective, Pearson Addison Wesley, Third Edition, 2005.