Articles | Volume 7
https://doi.org/10.5194/ars-7-231-2009
https://doi.org/10.5194/ars-7-231-2009
19 May 2009
 | 19 May 2009

Circuit design with Independent Double Gate Transistors

M. Weis, R. Emling, and D. Schmitt-Landsiedel

Abstract. Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.