Advances in Radio Science www.adv-radio-sci.net 1684-9965 1684-9973 7 Kleinheubacher Berichte 2008 2009 10.5194/ars-7-225-2009 http://www.adv-radio-sci.net/7/225/2009/ http://www.adv-radio-sci.net/7/225/2009/ars-7-225-2009.html http://www.adv-radio-sci.net/7/225/2009/ars-7-225-2009.pdf 225 229 2009-05-19 Influence of gate tunneling currents on switched capacitor integrators W. Kraus kraus@tum.de D. Schmitt-Landsiedel Institute for Technical Electronics, Technische Universität München, Germany In order to achieve a higher level of integration in modern VLSI systems, not only the lateral geometrical dimensions have to be scaled. Lowering the supply voltage also requires scaling down the oxide thickness of the transistors. While the oxide thickness is scaled down proportionally with the supply voltage, the gate tunneling currents grow exponentially, which results in special issues concerning deviations in charge based analog and mixed signal circuitry. The influence of gate tunneling currents on this kind of circuits will be demonstrated at a fully differential switched capacitor integrator. The used process data is derived from the International Technology Roadmap for Semiconductors (ITRS Roadmap, 2006). The Parameter sets for the simulations are based on the Predictive Technology Model of the Arizona State University Modelling Group for the 65 nm Technology node (Predictive Technology Model, 2008). ITRS Roadmap: Semiconductor Industry Association, The International Technology Roadmap for Semiconductors, http://www.itrs.net/, 2006. Predictive Technology Model: Nanoscale Integration and Modelling Group, Arizona State University, Predictive Technology Model, PTM, http://www.eas.asu.edu/~ptm/, 2008.