www.adv-radio-sci.net/7/145/2009/ doi:10.5194/ars-7-145-2009 © Author(s) 2009. This work is distributed under the Creative Commons Attribution 3.0 License. CMOS low noise amplifiers for 1.575 GHz GPS applications IMMS gGmbH, Erfurt, Germany Abstract. This paper presents Low Noise Amplifier (LNA) versions designed for 1.575 GHz L1 Band Global Positioning System (GPS) applications. A 0.35 μm standard CMOS process is used for implementation of these design versions. Different versions are designed to compare the results, analyze some effects and optimize some critical performance criteria. On-chip inductors with different quality factors and a slight topology change are utilized to achieve this variety. It is proven through both on-wafer and on-PCB measurements that the LNA versions operate at a supply voltage range varying from 2.1 V to 3.6 V drawing a current of 10 mA and achieve a gain of 13 dB to 17 dB with a Noise Figure (NF) of 1.5 dB. Input referred 1 dB compression point (ICP) is measured as −5.5 dBm and −10 dBm for different versions. Full Article in PDF (PDF, 871 KB) Citation: Isikhan, M. and Richter, A.: CMOS low noise amplifiers for 1.575 GHz GPS applications, Adv. Radio Sci., 7, 145-150, doi:10.5194/ars-7-145-2009, 2009. Bibtex EndNote Reference Manager XML |