<?xml version="1.0" encoding="utf-8" standalone="no"?>
<!DOCTYPE article SYSTEM "http://www.adv-radio-sci.net/inc/ars/copernicus.dtd">
<article language="en">
	<journal>
		<journal_title>Advances in Radio Science</journal_title>
		<journal_url>www.adv-radio-sci.net</journal_url>
		<issn>1684-9965</issn>
		<eissn>1684-9973</eissn>
		<volume_number>7</volume_number>
		<volume_title>Kleinheubacher Berichte 2008</volume_title>
		<publication_year>2009</publication_year>
	</journal>
	<doi>10.5194/ars-7-11-2009</doi>
	<article_url>http://www.adv-radio-sci.net/7/11/2009/</article_url>
	<abstract_html>http://www.adv-radio-sci.net/7/11/2009/ars-7-11-2009.html</abstract_html>
	<fulltext_pdf>http://www.adv-radio-sci.net/7/11/2009/ars-7-11-2009.pdf</fulltext_pdf>
	<start_page>11</start_page>
	<end_page>15</end_page>
	<publication_date>2009-05-18</publication_date>
	<article_title content_type="html">Comparison of methods for broadband electromagnetic characterization of Molded Interconnect Device materials</article_title>
	<authors>
		<author numeration="1" affiliations="1">
			<name>C. Orlob</name>
			<email>orlob@hft.uni-hannover.de</email>
		</author>
		<author numeration="2" affiliations="1">
			<name>D. Kornek</name>
		</author>
		<author numeration="3" affiliations="1">
			<name>S. Preihs</name>
		</author>
		<author numeration="4" affiliations="1">
			<name>I. Rolfes</name>
		</author>
	</authors>
	<affiliations>
		<affiliation numeration="1" content_type="html">Leibniz Universität Hannover, Institut für Hochfrequenztechnik und Funksysteme, Appelstr. 9A, 30167 Hannover, Germany</affiliation>
	</affiliations>
	<abstract content_type="html">Combining the Molded Interconnect Device technology with the Laser Direct
Structuring technology exhibits the potential of designing electrical and
mechanical components on three-dimensional surfaces to increase
functionality, level of integration and to reduce costs. When taking
advantage of this technology especially in the design of RF devices, a
precise knowledge of the electromagnetic parameters of the MID material is
required, as the complex permeability and permittivity strongly influence the
device performance. At present time, these materials are not
electromagnetically characterized in the RF frequency range. In this paper
different methods are therefore presented and compared with respect to their
potentials for broadband electromagnetic characterization of Molded
Interconnect Device materials.</abstract>
	<references>
		<reference numeration="1" content_type="text"> Arz, U. and Leinhos, J.: Broadband Permittivity Extraction from On-Wafer Scattering-Parameter Measurements, 12th IEEE Workshop on Signal Propagation on Interconnects, Avignon, France, 1–4, 2008. </reference>
		<reference numeration="2" content_type="text"> Baker-Jarvis, J., Vanzura, E. J., and Kissick, W. A.: Improved Technique for Determining Complex Permittivity with the Transmission/Reflection Method, IEEE T. Microw. Theory, 38, 1096–1103, 1990. </reference>
		<reference numeration="3" content_type="text"> Clarke, B., Gregory, A., Cannell, D., et al.: A Guide to the characterisation of dielectric materials at RF and microwave frequencies, National Physical Laboratory, Institute of Measurement and Control, London, 2003. </reference>
		<reference numeration="4" content_type="text"> Heinrich, W.: Quasi-TEM Description of MMIC Coplanar Lines Including Conductor-Loss Effects, IEEE T. Microw. Theory, 41, 45–52, 1993. </reference>
		<reference numeration="5" content_type="text"> Krupka, J., Derzakowski K., Riddle B., and Baker-Jarvis, J.: A dielectric resonator for measurements of complex permittivity of low loss dielectric materials as a function of temperature, Meas. Sci. Technol., 9, 1751–1756, 1998. </reference>
		<reference numeration="6" content_type="text"> Marks, R. B.: A Multiline Method of Network Analyzer Calibration, IEEE T. Microw. Theory, 39, 1205–1215, 1991. </reference>
		<reference numeration="7" content_type="text"> Nicolson, A. M. and Ross, G. F.: Measurement of the Intrinsic Properties of Materials by Time-Domain Techniques, IEEE T. Instrum. Meas., 19, 377–382, 1970. </reference>
		<reference numeration="8" content_type="text"> Schlueter, R., Roesener, B., Kickelhain, J., and Naundorf, G.: Completely Additive Laser-Based Process for the Production of 3D MIDs, The LPKF LDS Process, 5th International Congress Molded Interconnect Devices, Erlangen, Germany, 2002. </reference>
	</references>
</article>

