| Volumes Volume 6 Contents of Current Session |
www.adv-radio-sci.net/6/205/2008/
doi:10.5194/ars-6-205-2008
© Author(s) 2008. This work is distributed
under the Creative Commons Attribution 3.0 License.
Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
Hamburg University of Technology, Institute of Nanoelectronics, Hamburg, Germany
Abstract. This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.
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Citation: Domdey, A., Hafkemeyer, K. M., Krautschneider, W. H., and Schroeder, D.: Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system, Adv. Radio Sci., 6, 205-207, doi:10.5194/ars-6-205-2008, 2008. Bibtex EndNote Reference Manager XML
