Articles | Volume 6
https://doi.org/10.5194/ars-6-205-2008
https://doi.org/10.5194/ars-6-205-2008
26 May 2008
 | 26 May 2008

Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system

A. Domdey, K. M. Hafkemeyer, W. H. Krautschneider, and D. Schroeder

Abstract. This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.

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