Advances in Radio Science www.adv-radio-sci.net 1684-9965 1684-9973 4 Kleinheubacher Berichte 2005 2006 10.5194/ars-4-7-2006 http://www.adv-radio-sci.net/4/7/2006/ http://www.adv-radio-sci.net/4/7/2006/ars-4-7-2006.html http://www.adv-radio-sci.net/4/7/2006/ars-4-7-2006.pdf 7 10 2006-09-04 Breakdown behavior of electronics at variable pulse repetition rates S. Korte korte@ieee.org H. Garbe Institute of Electrical Engineering and Measurement Science, University of Hannover, Germany The breakdown behavior of electronics exposed to single transient electromagnetic pulses is subject of investigations for several years. State-of-the-art pulse generators additionally provide the possibility to generate pulse sequences with variable pulse repetition rate. In this article the influence of this repetition rate variation on the breakdown behavior of electronic systems is described. For this purpose microcontroller systems are examined during line-led exposure to pulses with repetition rates between 1 KHz and 100 KHz. Special attention is given to breakdown thresholds and breakdown probabilities of the electronic devices. Camp,~M.: Empfindlichkeit elektronischer Schaltungen gegen transiente elektromagnetische Feldimpulse, Diss., Univ. of Hanover, Shaker Verlag, 2004. Camp,~M., Garbe,~H., and Nitsch,~D.: Influence of the Technology on the Destruction Effects of Semiconductors by Impact of EMP and UWB Pulses, IEEE Intern. Symposium on Electrom. Compatibility, USA, Minneapolis, 87–92, 2002. Camp,~M., Korte,~S., and Garbe,~H.: Classification of the Destruction Effects in CMOS-Devices after Impact of Fast Transient Electromagnetic Pulses, EUROEM, 14$^th$ High Power Electrom. Conf. (HPEM 14), 7$^th$ Ultra-Wide-Band Short-Pulse Electrom. Conf. (UWB SP7), 7$^th$ Unexploded Ordnance Detection and Range Remediation Conf. (UXO 7), Germany, 96, 2004.