Abstract. Losses due to gate-leakage-currents become more dominant in new technologies as gate leakage currents increase exponentially with decreasing gate oxide thickness. The most promising Adiabatic Logic (AL) families use a clocked power supply with four states. Hence, the full V_DD voltage drops over an AL gate only for a quarter of the clock cycle, causing a full gate leakage only for a quarter of the clock period. The rising and falling ramps of the clocked power supply lead to an additional energy consumption by gate leakage. This energy is smaller than the fraction caused by the constant V_DD drop, because the gate leakage exponentially depends on the voltage across the oxide. To obtain smaller energy consumption, Improved Adiabatic Logic (IAL) has been introduced. IAL swaps all n- and p-channel transistors. The logic blocks are built of p-channel devices which show gate tunneling currents significantly smaller than in n-channel devices. Using IAL instead of conventional AL allows an additional reduction of the energy consumption caused by gate leakage. Simulations based on a 90nm CMOS process show a lowering in gate leakage energy consumption for AL by a factor of 1.5 compared to static CMOS. For IAL the factor is up to 4. The achievable reduction varies depending on the considered AL family and the complexity of the gate.