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<article language="en">
	<journal>
		<journal_title>Advances in Radio Science</journal_title>
		<journal_url>www.adv-radio-sci.net</journal_url>
		<issn>1684-9965</issn>
		<eissn>1684-9973</eissn>
		<volume_number>1</volume_number>
		<volume_title>Kleinheubacher Berichte 2002</volume_title>
		<publication_year>2003</publication_year>
	</journal>
	<doi>10.5194/ars-1-181-2003</doi>
	<article_url>http://www.adv-radio-sci.net/1/181/2003/</article_url>
	<abstract_html>http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.html</abstract_html>
	<fulltext_pdf>http://www.adv-radio-sci.net/1/181/2003/ars-1-181-2003.pdf</fulltext_pdf>
	<start_page>181</start_page>
	<end_page>184</end_page>
	<publication_date>2005-05-05</publication_date>
	<article_title content_type="html">A curvature-corrected CMOS bandgap reference</article_title>
	<authors>
		<author numeration="1" affiliations="1">
			<name>O. Mitrea</name>
		</author>
		<author numeration="2" affiliations="2">
			<name>C. Popa</name>
		</author>
		<author numeration="3" affiliations="2">
			<name>A. M. Manolescu</name>
		</author>
		<author numeration="4" affiliations="1">
			<name>M. Glesner</name>
		</author>
	</authors>
	<affiliations>
		<affiliation numeration="1" content_type="html">Darmstadt University of Technology, Karlstr. 15, 64283 Darmstadt, Germany</affiliation>
		<affiliation numeration="2" content_type="html">University Politehnica of Bucharest, Bd. Iuliu Maniu 1–3, Bucharest, Romania</affiliation>
	</affiliations>
	<abstract content_type="html">This paper presents a CMOS bandgap reference
that employs a curvature correction technique for compensating
the nonlinear voltage temperature dependence of a diode
connected BJT. The proposed circuit cancels the first and the
second order terms in the &lt;i&gt;V&lt;sub&gt;BE&lt;/sub&gt;(T )&lt;/i&gt; expansion by using the
current of an autopolarizedWidlar source and a small correction
current generated by a MOSFET biased in weak inversion.
The voltage reference has been fabricated in a 0.35&lt;i&gt;µ&lt;/i&gt;m
3Metal/2Poly CMOS technology and the chip area is approximately
70&lt;i&gt;µ&lt;/i&gt;m × 110&lt;i&gt;µ&lt;/i&gt;m. The measured temperature coefficient
is about 10.5 ppm/K over a temperature range of 10–
90°C while the power consumption is less than 1.4mW.</abstract>
	<references>
	</references>
</article>

