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A curvature-corrected CMOS bandgap reference
1Darmstadt University of Technology, Karlstr. 15, 64283 Darmstadt, Germany
2University Politehnica of Bucharest, Bd. Iuliu Maniu 1–3, Bucharest, Romania
Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.
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Citation: Mitrea, O., Popa, C., Manolescu, A. M., and Glesner, M.: A curvature-corrected CMOS bandgap reference, Adv. Radio Sci., 1, 181-184, 2003. Bibtex EndNote Reference Manager
